Chen Li

Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.

Federal Grant PI

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University of Arkansas primary UA Div. of Agriculture

Also affiliated: Xidian University (2024); University of Electronic Science and Technology of China (2007–2022); Jilin University (2012); Chinese Academy of Sciences (2005); Harbin Institute of Technology (2022); Deutsches Elektronen-Synchrotron DESY (2019–2024); ShanghaiTech University (2021); Huangshan University (2022); Anhui Institute of Optics and Fine Mechanics (2005); Collaborative Innovation Center of Advanced Microstructures (2020–2023); National Laboratory of Solid State Microstructures (2020–2022); Xiamen University of Technology (2022); Nanjing University (2020–2022); Tsinghua University (2005)

Food Science

14 h-index 53 pubs 549 cited

Research Areas

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ORCID

OverviewAI-generated summary

Chen Li's research has primarily focused on materials science, with a significant emphasis on molecular beam epitaxy (MBE) growth of semiconductor heterostructures and topological insulators. His work includes the fabrication of materials such as Bi2Te3, Sb2Te3, GaAsBi, and AlxGa1–xN on various substrates, investigating their structural and electronic properties. Li has explored methods for growing quantum dots and heterostructures, including the use of bismuth surfactants to mediate growth. His research has also touched upon the characterization of these nanoscale materials using techniques such as X-ray dynamical diffraction.

Beyond materials science, Li has been involved in research related to advanced sensing technologies, including the development of fiber-optic microphones based on graphene oxide membranes. He has also contributed to computational research, serving as PI on an NSF grant for developing high-order algorithms for fluid dynamics simulations. His collaborative efforts at the University of Arkansas at Fayetteville involve numerous shared publications with colleagues in materials science and related fields.

Li's scholarly contributions are reflected in his h-index of 14 and over 540 citations across more than 50 publications. He has secured federal funding totaling over $538,000, including an NIH grant focused on tunable multi-timescale cortical dynamics and the aforementioned NSF grant for fluid dynamics simulations.

Metrics

h-index: 14
Publications: 53
Citations: 549

Selected Publications

Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)

Crystal Growth & Design 2 citations DOI OpenAlex
The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy (2024)

RSC Advances 10 citations DOI OpenAlex
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)

Crystals 3 citations DOI OpenAlex
Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge1–xSnx Epilayers Grown by MBE at Different Temperatures (2023)

Crystal Growth & Design 9 citations DOI OpenAlex
Title: Growth of germanium thin film on sapphire by molecular beam epitaxy (2023)

Preprints.org 2 citations DOI OpenAlex
Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 1 citation DOI OpenAlex
Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)

Journal of Crystal Growth 4 citations DOI OpenAlex
Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells (2020)

Materials & Design 7 citations DOI OpenAlex
Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers (2018)

Crystal Growth & Design 17 citations DOI OpenAlex
High temperature capacitors using AlN grown by MBE as the dielectric (2018)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 6 citations DOI OpenAlex
Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures (2018)

Journal of Applied Physics 4 citations DOI OpenAlex
Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy (2018)

ACS Applied Materials & Interfaces 17 citations DOI OpenAlex
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate (2015)

ACS Applied Materials & Interfaces 19 citations DOI OpenAlex
Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction (2014)

Journal of Applied Physics 17 citations DOI OpenAlex
MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures (2013)

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 24 citations DOI OpenAlex