Chen Li
Affiliation confirmed via AI analysis of OpenAlex, ORCID, and web sources.
Researcher
Also affiliated: Xidian University (2024); University of Electronic Science and Technology of China (2007–2022); Jilin University (2012); Deutsches Elektronen-Synchrotron DESY (2019–2024); ShanghaiTech University (2021); Huangshan University (2022); Anhui Institute of Optics and Fine Mechanics (2005); Material Sciences (United States) (2013); Development Research Center (2011); Collaborative Innovation Center of Advanced Microstructures (2020–2022); Jilin Agricultural University (2012); Changchun University (2012); Xiamen University of Technology (2022); Nanjing University (2020–2022); Tsinghua University (2005)
Faculty Researcher
Food Science
Research Areas
Links
Biography and Research Information
OverviewAI-generated summary
Chen Li's research focuses on the growth and characterization of semiconductor materials, particularly those relevant to optoelectronic devices. Their work has investigated the molecular beam epitaxy (MBE) growth of various material systems, including AlGaN, Ge, GeSn, and InAs/AlAs superlattices.
Recent publications detail efforts to enhance carrier confinement in AlGaN-based deep-ultraviolet light-emitting diodes through compositionally graded electron-blocking layers. Other studies examine the MBE growth of germanium and direct bandgap GeSn on GaAs, exploring strain-mediated Sn incorporation and segregation. Research also includes the annealing-induced carrier activation and photoluminescence enhancement in Ge-on-Si, as well as the growth of Ge thin films on sapphire. Further work explores tunable bandgaps in InAs/AlAs strain-compensated short-period superlattices and compares AlN/GaN heterojunctions grown with different growth assistances. The depth-dependent photoluminescence characteristics of GeSn/SiGeSn multi-quantum wells have also been investigated.
Chen Li has served as PI on an NSF grant for robust and efficient high-order algorithms for fluid dynamics simulations and as Co-PI on an NIH/NIDA grant for tunable multi-timescale cortical dynamics. With an h-index of 13 and 480 citations across 52 publications, their research network includes numerous collaborators at the University of Arkansas at Fayetteville, such as Yuriy I. Mazur, Fernando Maia de Oliveira, Shui-Qing Yu, and Hryhorii Stanchu.
Metrics
- h-index: 14
- Publications: 53
- Citations: 544
Selected Publications
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Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer (2024)
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The growth of Ge and direct bandgap Ge <sub> 1− <i>x</i> </sub> Sn <sub> <i>x</i> </sub> on GaAs (001) by molecular beam epitaxy (2024)
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Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy (2023)
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Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures (2023)
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Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film (2023)
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Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells (2022)
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Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells (2020)
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Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers (2018)
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High temperature capacitors using AlN grown by MBE as the dielectric (2018)
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Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures (2018)
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Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy (2018)
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Nanoscale Electrostructural Characterization of Compositionally Graded Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N Heterostructures on GaN/Sapphire (0001) Substrate (2015)
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Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction (2014)
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MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures (2013)
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Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction (2013)
Federal Grants 2 $538,030 total
Tunable multi-timescale cortical dynamics: fundamental theory and practical tools
Collaboration Network
Top Collaborators
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Showing 5 of 6 shared publications
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
Showing 5 of 6 shared publications
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Depth-dependent photoluminescence characteristic of GeSn/SiGeSn multi-quantum wells
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge<sub>1–<i>x</i></sub>Sn<sub><i>x</i></sub> Epilayers Grown by MBE at Different Temperatures
- Improved Quality of InN Thin Films Using a Thin InGaN Compressive Strain Gradient Layer
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
- The growth of Ge and direct bandgap Ge<sub>1−<i>x</i></sub>Sn<sub><i>x</i></sub> on GaAs (001) by molecular beam epitaxy
- Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
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